MRFG35030R5
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL base station applications with frequencies from 3400 to
3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
Class AB applications.
?
Typical Single?Carrier W?CDMA Performance: VDD
=
12
Volts, I
DQ
=
650 mA, Pout
= 3 Watts Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —12 dB
Drain Efficiency — 21%
ACPR @ 5 MHz Offset — ?41 dBc @ 3.84 MHz Channel Bandwidth
?
Internally Matched, Controlled Q, for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Excellent Thermal Stability
?
In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain?Source Voltage
VDSS
15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
79
0.53
W
W/°C
Gate?Source Voltage
VGS
?
5
Vdc
RF Input Power
Pin
37
dBm
Storage Temperature Range
Tstg
?
40 to +175
°C
Channel Temperature (1)
Tch
175
°C
Operating Case Temperature Range
TC
?
20 to +90
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.9
°C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C.
MRFG35030R5
Rev. 2, 3/2005
Freescale Semiconductor
Technical Data
3550 MHz, 30 W, 12 V
SINGLE W?CDMA
POWER FET
GaAs PHEMT
MRFG35030R5
CASE 1490?02, STYLE 1
?
Freescale Semiconductor, Inc., 2005. All rights reserved.
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